Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy

Yutaka Ohno, Takeo Shirahama, Seiji Takeda, Atsushi Ishizumi, Yoshihiko Kanemitsu

研究成果: Article査読

28 被引用数 (Scopus)

抄録

We grew ZnSe needle-like nanowires on a ZnSeGaAs epilayer using Fe catalysts by means of molecular-beam epitaxy operated at low temperatures of 250-350°C, which are comparable to the usual temperatures for fabrication of ZnSe-based optoelectronic devices. The diameters at the tops of the nanowires ranged from 8 to 20 nm, and the typical length was about 200 nm. The number density of the nanowires was the order of 109 cm-2. A nanowire was the zinc blende structure and the longitudinal direction was 〈001〉, 〈111〉, 〈110〉, or 〈112〉. Photoluminescence spectroscopy implied that the optical property of the nanowires differs from that of the bulk crystals.

本文言語English
論文番号043105
ジャーナルApplied Physics Letters
87
4
DOI
出版ステータスPublished - 2005 7月 25
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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