Fano resonance in Raman scattering of graphene

Duhee Yoon, Dongchan Jeong, Hu Jong Lee, Riichiro Saito, Young Woo Son, Hyun Cheol Lee, Hyeonsik Cheong

研究成果: Article査読

32 被引用数 (Scopus)

抄録

Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.

本文言語English
ページ(範囲)373-378
ページ数6
ジャーナルCarbon
61
DOI
出版ステータスPublished - 2013 9月

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)

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