Failure analysis of a SiC MOS capacitor with a poly-Si gate electrode

Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa

研究成果: Conference contribution

抄録

The failure mechanism of a SiC metal-oxide-semiconductor capacitor with a poly-Si gate electrode was investigated by time-dependent dielectric breakdown testing under a 200-nA constant current stress. The capacitor exhibited both hard and soft breakdowns. After dielectric breakdown in both cases, adjacent concaves were observed on the capacitor with a field-emission scanning electron microscope. Additional optical beam-induced resistance changes and photo-emission analysis of a capacitor after hard-breakdown located a failure point on the periphery of a group of adjacent concaves. Cross-sectional scanning transmission electron microscope observation revealed that a narrow, vertical defect had formed at this point on the SiC substrate.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2015
編集者Fabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
出版社Trans Tech Publications Ltd
ページ485-488
ページ数4
ISBN(印刷版)9783035710427
DOI
出版ステータスPublished - 2016
イベント16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
継続期間: 2015 10 42015 10 9

出版物シリーズ

名前Materials Science Forum
858
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
国/地域Italy
CitySicily
Period15/10/415/10/9

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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