Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

T. Hitosugi; N. Yamada; N. L.H. Hoang; J. Kasai; S. Nakao; T. Shimada; T. Hasegawa

doi:10.1016/j.tsf.2008.11.090

Fabrication of TiO₂-based transparent conducting oxide on glass and polyimide substrates

T. Hitosugi, N. Yamada, N. L.H. Hoang, J. Kasai, S. Nakao, T. Shimada, T. Hasegawa

研究成果: Article › 査読

36 被引用数 (Scopus)

抄録

We report on preparation and properties of anatase Nb-doped TiO₂ transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti_0.96Nb_0.04O₂ films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (ρ) of the films. We attained ρ = 9.2 × 10^{- 4} Ω cm and transmittance of ~ 70% in the visible region on glass by annealing at 300 °C in vacuum. The minimum ρ of 7.0 × 10^{- 4} Ω cm was obtained by 400 °C annealing in pure H₂.

本文言語	English
ページ（範囲）	3106-3109
ページ数	4
ジャーナル	Thin Solid Films
巻	517
号	10
DOI	https://doi.org/10.1016/j.tsf.2008.11.090
出版ステータス	Published - 2009 3月 31

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

文献へのアクセス

10.1016/j.tsf.2008.11.090

他のファイルとリンク

引用スタイル

@article{d01c283460a04e6aac4fe02ce18d9a75,

title = "Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates",

abstract = "We report on preparation and properties of anatase Nb-doped TiO2 transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti0.96Nb0.04O2 films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (ρ) of the films. We attained ρ = 9.2 × 10- 4 Ω cm and transmittance of ~ 70% in the visible region on glass by annealing at 300 °C in vacuum. The minimum ρ of 7.0 × 10- 4 Ω cm was obtained by 400 °C annealing in pure H2.",

keywords = "Sputtering, Titanium dioxide, Titanium oxide, Transparent conducting oxide",

author = "T. Hitosugi and N. Yamada and Hoang, {N. L.H.} and J. Kasai and S. Nakao and T. Shimada and T. Hasegawa",

note = "Funding Information: This work was supported by the Global COE Program for Chemistry Innovation, NEDO, MEXT Elements Science and Technology Project, and Grain-in-Aid for Young Scientists (B) 19760475, 2007.",

year = "2009",

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doi = "10.1016/j.tsf.2008.11.090",

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T1 - Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

AU - Hitosugi, T.

AU - Yamada, N.

AU - Hoang, N. L.H.

AU - Kasai, J.

AU - Nakao, S.

AU - Shimada, T.

AU - Hasegawa, T.

N1 - Funding Information: This work was supported by the Global COE Program for Chemistry Innovation, NEDO, MEXT Elements Science and Technology Project, and Grain-in-Aid for Young Scientists (B) 19760475, 2007.

PY - 2009/3/31

Y1 - 2009/3/31

N2 - We report on preparation and properties of anatase Nb-doped TiO2 transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti0.96Nb0.04O2 films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (ρ) of the films. We attained ρ = 9.2 × 10- 4 Ω cm and transmittance of ~ 70% in the visible region on glass by annealing at 300 °C in vacuum. The minimum ρ of 7.0 × 10- 4 Ω cm was obtained by 400 °C annealing in pure H2.

AB - We report on preparation and properties of anatase Nb-doped TiO2 transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti0.96Nb0.04O2 films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (ρ) of the films. We attained ρ = 9.2 × 10- 4 Ω cm and transmittance of ~ 70% in the visible region on glass by annealing at 300 °C in vacuum. The minimum ρ of 7.0 × 10- 4 Ω cm was obtained by 400 °C annealing in pure H2.

KW - Sputtering

KW - Titanium dioxide

KW - Titanium oxide

KW - Transparent conducting oxide

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