TY - JOUR
T1 - Fabrication of Ti-nanowires in sapphire single crystals
AU - Nakamura, Atsutomo
AU - Matsunaga, Katsuyuki
AU - Yamamoto, Takahisa
AU - Ikuhara, Yuichi
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research from Japan Society for the Promotion of Science, and the Ministry of Education, Culture, Sports, Science and Technology of Japan. A part of this work was also supported by the Active Nano-characterization and Technology Project, MEXT, Japan. YI also thanks PRESTO, JST for the financial support.
PY - 2005/2/28
Y1 - 2005/2/28
N2 - We report electrical conductivity of Ti-nanowires in sapphire fabricated by utilizing lattice dislocations. We evaporated metallic Ti on a sapphire plate containing high density of uniaxial dislocations, and annealed the plate at high temperatures. As a result, it was found that Ti atoms intensely segregated along the dislocations within about 5 nm in diameter, indicating the formation of Ti-nanowires inside sapphire. Furthermore, the nanowires were confirmed to have significant electrical conductivity even in sapphire insulator.
AB - We report electrical conductivity of Ti-nanowires in sapphire fabricated by utilizing lattice dislocations. We evaporated metallic Ti on a sapphire plate containing high density of uniaxial dislocations, and annealed the plate at high temperatures. As a result, it was found that Ti atoms intensely segregated along the dislocations within about 5 nm in diameter, indicating the formation of Ti-nanowires inside sapphire. Furthermore, the nanowires were confirmed to have significant electrical conductivity even in sapphire insulator.
KW - Dislocations
KW - Electric conductivity
KW - Quantum wires
KW - Sapphire
KW - Scanning probe microscope (SPM)
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U2 - 10.1016/j.apsusc.2004.09.015
DO - 10.1016/j.apsusc.2004.09.015
M3 - Article
AN - SCOPUS:12244277438
VL - 241
SP - 38
EP - 42
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-2 SPEC. ISS.
ER -