Fabrication of stable n-type thin-film transistor with Cs encapsulated single-walled carbon nanotubes

Toshiaki Kato, Rikizo Hatakeyama, Yosuke Osanai

研究成果: Chapter

抄録

Thin-film transistors (TFTs) are one of the most promising practical applications of single-walled carbon nanotubes (SWNTs) due to their flexible filament-like structure and high carrier mobility [1]. For the fabrication of industrial electrical devices, it is an inevitable issue to utilize both p- and n-type transistors as basic components of the electrical circuits. Since oxygen and water molecules adsorbing on the surface of SWNTs are known to play a role as an electron acceptor against SWNTs, SWNTs-TFTs have p-type semiconducting features. To date, there are several reports on the fabrication of n-type SWNTs-TFTs by functionalizing the outside surface of SWNTs [2]. However, the operation of n-type SWNTs-TFTs is limited only under the specific condition and the fabrication of stable n-type SWNTs-TFTs under the various environmental conditions has not been realized.

本文言語English
ホスト出版物のタイトルNanoelectronic Device Applications Handbook
出版社CRC Press
ページ505-508
ページ数4
ISBN(電子版)9781466565241
ISBN(印刷版)9781466565234
DOI
出版ステータスPublished - 2017 1 1

ASJC Scopus subject areas

  • 工学(全般)

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