TY - GEN
T1 - Fabrication of silicon nitride ceramics with electrical conductivity
AU - Kim, Yoon Ho
AU - Sekino, T.
AU - Kawaoka, H.
AU - Kusunose, T.
AU - Nakayama, T.
AU - Niihara, K.
PY - 2005
Y1 - 2005
N2 - The electrical conductivity was provided to structural ceramics by controlling the grain boundary phase. We focused on the grain boundary phase of Si3N4 ceramics, which can be considered as an infinite network for conducting paths. In this study, we investigated the correlationship of the microstructure, mechanical properties, and electrical conductivity of Si3N4 ceramics with V2O5 based glasses. The Si3N4 ceramic with V2O5 based glasses were successfully fabricated by controlling the composition of grain boundary phase. Fabricated materials by a PECS method indicated a very fine microstructure. The mechanical properties of Si3N4 ceramics with V2O5 based glasses were not good compared to those of conventional Si3N4. However, the values for the SNVB and the SNVBA were four or six orders of magnitude higher at room temperature and had excellent mechanical properties compared to pure V 2O5 based glasses.
AB - The electrical conductivity was provided to structural ceramics by controlling the grain boundary phase. We focused on the grain boundary phase of Si3N4 ceramics, which can be considered as an infinite network for conducting paths. In this study, we investigated the correlationship of the microstructure, mechanical properties, and electrical conductivity of Si3N4 ceramics with V2O5 based glasses. The Si3N4 ceramic with V2O5 based glasses were successfully fabricated by controlling the composition of grain boundary phase. Fabricated materials by a PECS method indicated a very fine microstructure. The mechanical properties of Si3N4 ceramics with V2O5 based glasses were not good compared to those of conventional Si3N4. However, the values for the SNVB and the SNVBA were four or six orders of magnitude higher at room temperature and had excellent mechanical properties compared to pure V 2O5 based glasses.
KW - Electrical conductivity
KW - Glassy grain boundary phase
KW - Silicon nitride
UR - http://www.scopus.com/inward/record.url?scp=35148817065&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35148817065&partnerID=8YFLogxK
U2 - 10.4028/0-87849-966-0.501
DO - 10.4028/0-87849-966-0.501
M3 - Conference contribution
AN - SCOPUS:35148817065
SN - 0878499660
SN - 9780878499663
T3 - Materials Science Forum
SP - 501
EP - 505
BT - Eco-Materials Processing and Design VI - Proceedings of the 6th International Symposium on Eco-Materials Processing and Design, ISEPD-6
PB - Trans Tech Publications Ltd
T2 - 6th International Symposium on Eco-Materials Processing and Design, ISEPD-6
Y2 - 16 January 2005 through 18 January 2005
ER -