Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, K. Nakajima

研究成果: Article査読

7 被引用数 (Scopus)

抄録

SiGe bulk crystal was grown by the multicomponent zone-melting method equipped with an in situ monitoring system of the position and the temperature at the crystal-solution interface. By utilizing the in situ monitoring system, an attempt was made to control the interface position at a fixed position during growth by balancing the growth rate and the pulling rate of the crystal. This led to realization of SiGe bulk crystal with Ge composition of 0.86±0.004 over 22 mm in length. However, as growth proceeds, development of small angle boundaries was evidenced by X-ray characterizations. This polycrystallization was found to be accompanied with appearance of deep-level emission in photoluminescence spectra. A preliminary result to grow SiGe with intermediate composition, which is important for Si-based heterostructures, was also performed.

本文言語English
ページ(範囲)364-367
ページ数4
ジャーナルMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
89
1-3
DOI
出版ステータスPublished - 2002 2月 14

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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