Fabrication of Se-rich Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf> quaternary ceramic target

Xiaolong Li; Ming Zhao; Daming Zhuang; Mingjie Cao; Liangqi Ouyang; Li Guo; Rujun Sun; Zedong Gao

doi:10.1016/j.vacuum.2015.04.027

Fabrication of Se-rich Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf> quaternary ceramic target

Xiaolong Li, Ming Zhao, Daming Zhuang, Mingjie Cao, Liangqi Ouyang, Li Guo, Rujun Sun, Zedong Gao

金属材料研究所

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

High density Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf>(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N<inf>2</inf> instead of toxic H<inf>2</inf>Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.

本文言語	English
ページ（範囲）	15-18
ページ数	4
ジャーナル	Vacuum
巻	119
DOI	https://doi.org/10.1016/j.vacuum.2015.04.027
出版ステータス	Published - 2015 5月 10

ASJC Scopus subject areas

凝縮系物理学
器械工学
表面、皮膜および薄膜

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10.1016/j.vacuum.2015.04.027

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引用スタイル

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title = "Fabrication of Se-rich Cu(In1-XGaX)Se2 quaternary ceramic target",

abstract = "High density Cu(In1-XGaX)Se2(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N2 instead of toxic H2Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.",

keywords = "CIGS, Se-rich, Selenization, Sintering, Thin film",

author = "Xiaolong Li and Ming Zhao and Daming Zhuang and Mingjie Cao and Liangqi Ouyang and Li Guo and Rujun Sun and Zedong Gao",

year = "2015",

month = may,

day = "10",

doi = "10.1016/j.vacuum.2015.04.027",

language = "English",

volume = "119",

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journal = "Vacuum",

issn = "0042-207X",

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}

TY - JOUR

T1 - Fabrication of Se-rich Cu(In1-XGaX)Se2 quaternary ceramic target

AU - Li, Xiaolong

AU - Zhao, Ming

AU - Zhuang, Daming

AU - Cao, Mingjie

AU - Ouyang, Liangqi

AU - Guo, Li

AU - Sun, Rujun

AU - Gao, Zedong

PY - 2015/5/10

Y1 - 2015/5/10

N2 - High density Cu(In1-XGaX)Se2(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N2 instead of toxic H2Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.

AB - High density Cu(In1-XGaX)Se2(CIGS) quaternary ceramic targets were prepared by hot-pressing sintering from CIGS and Se mixed powders. Influences of Se contents and sintering temperatures on the densities, compositions, structures and morphologies of the CIGS targets were investigated. The results show that the structure of the targets after sintering was single chalcopyrite, and the concentration of Se was higher than 50 at%. CIGS thin films were fabricated by magnetron sputtering followed by an annealing process in N2 instead of toxic H2Se. CIGS films with a Se-rich concentration and appropriate electrical properties for fabricating CIGS solar cells were achieved after annealing.

KW - CIGS

KW - Se-rich

KW - Selenization

KW - Sintering

KW - Thin film

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SN - 0042-207X

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JO - Vacuum

JF - Vacuum

ER -

Fabrication of Se-rich Cu(In<inf>1-X</inf>Ga<inf>X</inf>)Se<inf>2</inf> quaternary ceramic target

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ASJC Scopus subject areas

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