Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles

Tran Thi Thu Huong, Kazuhiko Matsumoto, Masataka Moriya, Hiroshi Shimada, Yasuo Kimura, Ayumi Hirano-Iwata, Yoshinao Mizugaki

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We demonstrated one type of single-electron device that exhibited electrical characteristics similar to those of resistively-coupled SE transistor (R-SET) at 77 K and room temperature (287 K). Three Au electrodes on an oxidized Si chip served as drain, source, and gate electrodes were formed using electron-beam lithography and evaporation techniques. A narrow (70-nm-wide) gate electrode was patterned using thermal evaporation, whereas wide (800-nm-wide) drain and source electrodes were made using shadow evaporation. Subsequently, aqueous solution of citric acid and 15-nm-diameter gold nanoparticles (Au NPs) and toluene solution of 3-nm-diameter Au NPs chemisorbed via decanethiol were dropped on the chip to make the connections between the electrodes. Current–voltage characteristics between the drain and source electrodes exhibited Coulomb blockade (CB) at both 77 and 287 K. Dependence of the CB region on the gate voltage was similar to that of an R-SET. Simulation results of the model based on the scanning electron microscopy image of the device could reproduce the characteristics like the R-SET.

本文言語English
論文番号557
ジャーナルApplied Physics A: Materials Science and Processing
123
8
DOI
出版ステータスPublished - 2017 8 1
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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