TY - GEN
T1 - Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system
AU - Ohta, Tsuneaki
AU - Kumar, R.
AU - Noda, Syuuichi
AU - Kasai, M.
AU - Hoga, Hiroshi
PY - 1994/12/1
Y1 - 1994/12/1
N2 - The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000°C showed the suitable properties for X-ray mask, such as well-controlled tensile stress of 5 × 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000°C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000°C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.
AB - The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000°C showed the suitable properties for X-ray mask, such as well-controlled tensile stress of 5 × 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000°C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000°C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.
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M3 - Conference contribution
AN - SCOPUS:0028746470
SN - 0819415634
SN - 9780819415639
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 304
EP - 312
BT - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Photomask and X-Ray Mask Technology
Y2 - 22 April 1994 through 22 April 1994
ER -