Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system

Tsuneaki Ohta, R. Kumar, Syuuichi Noda, M. Kasai, Hiroshi Hoga

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000°C showed the suitable properties for X-ray mask, such as well-controlled tensile stress of 5 × 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000°C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000°C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.

本文言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
ページ304-312
ページ数9
出版ステータスPublished - 1994 12 1
イベントPhotomask and X-Ray Mask Technology - Kawasaki City, Jpn
継続期間: 1994 4 221994 4 22

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
2254
ISSN(印刷版)0277-786X

Other

OtherPhotomask and X-Ray Mask Technology
CityKawasaki City, Jpn
Period94/4/2294/4/22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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