Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system

Tsuneaki Ohta; R. Kumar; Syuuichi Noda; M. Kasai; Hiroshi Hoga

Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system

Tsuneaki Ohta, R. Kumar, Syuuichi Noda, M. Kasai, Hiroshi Hoga

マイクロシステム融合研究開発センター

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000°C showed the suitable properties for X-ray mask, such as well-controlled tensile stress of 5 × 10⁷ Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000°C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000°C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.

本文言語	English
ホスト出版物のタイトル	Proceedings of SPIE - The International Society for Optical Engineering
ページ	304-312
ページ数	9
出版ステータス	Published - 1994 12 1
イベント	Photomask and X-Ray Mask Technology - Kawasaki City, Jpn 継続期間: 1994 4 22 → 1994 4 22

出版物シリーズ

名前	Proceedings of SPIE - The International Society for Optical Engineering
巻	2254
ISSN（印刷版）	0277-786X

Other

Other	Photomask and X-Ray Mask Technology
City	Kawasaki City, Jpn
Period	94/4/22 → 94/4/22

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
コンピュータサイエンスの応用
応用数学
電子工学および電気工学

他のファイルとリンク

Link to publication in Scopus

フィンガープリント

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引用スタイル

Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system. / Ohta, Tsuneaki; Kumar, R.; Noda, Syuuichi; Kasai, M.; Hoga, Hiroshi.

Proceedings of SPIE - The International Society for Optical Engineering. 1994. p. 304-312 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2254).

研究成果: Conference contribution

Ohta, T, Kumar, R, Noda, S, Kasai, M & Hoga, H 1994, Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2254, pp. 304-312, Photomask and X-Ray Mask Technology, Kawasaki City, Jpn, 94/4/22.

Ohta, Tsuneaki ; Kumar, R. ; Noda, Syuuichi ; Kasai, M. ; Hoga, Hiroshi. / Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system. Proceedings of SPIE - The International Society for Optical Engineering. 1994. pp. 304-312 (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000°C showed the suitable properties for X-ray mask, such as well-controlled tensile stress of 5 × 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000°C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000°C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.",

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AU - Hoga, Hiroshi

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AB - The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000°C showed the suitable properties for X-ray mask, such as well-controlled tensile stress of 5 × 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000°C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000°C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.

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