Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties

Syunji Nakata, Syoji Yamada, Yoshiro Hirayama, Tadashi Saku, Yoshiji Horikoshi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Quantum wire structures are defined on a modulation-doped AlGaAs/GaAs wafer grown by MBE using highly resistive regions formed by focused-Ga-ion-beam scanning and subsequent annealing. These fabricated wires show positive magnetoconductance and universal conductance fluctuations at low temperature. A Schottky electrode is placed on these wires and magnetoresistance characteristics are measured by changing the gate voltage at a fixed temperature. Ballistic electron transport is confirmed for a short wire, 0.6 µm in length, whereas universal conductance fluctuations are observed for a long wire, 2.4 µm in length, and the relationship between the phase coherent length and the conductance is obtained as Lin∝G0.7from the gate voltage dependence on fluctuation amplitude.

本文言語English
ページ(範囲)48-52
ページ数5
ジャーナルJapanese journal of applied physics
29
1 R
DOI
出版ステータスPublished - 1990 1月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル