Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Abhiram Gundimeda, Shibin Krishna, Neha Aggarwal, Alka Sharma, Nita Dilawar Sharma, K. K. Maurya, Sudhir Husale, Govind Gupta

研究成果: Article査読

129 被引用数 (Scopus)

抄録

We report the fabrication of ultraviolet photodetector on non-polar (11-20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1-102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10-11 WHz-1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

本文言語English
論文番号103507
ジャーナルApplied Physics Letters
110
10
DOI
出版ステータスPublished - 2017 3月 6
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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