Fabrication of nb-doped tio2 transparent conducting films by postdeposition annealing under nitrogen atmosphere

Sohei Okazaki, Junpei Ohkubo, Shoichiro Nakao, Yasushi Hirose, Taro Hitosugi, Tetsuya Hasegawa

    研究成果: Article

    7 引用 (Scopus)

    抜粋

    Here, we report that highly conductive polycrystalline anatase Nb-doped TiO2 (TNO) thin films can be prepared via crystallization of amorphous precursors under N2 atmosphere. An optimized TNO film on a glass substrate exhibited a low resistivity of 8:4 104 cm and an absorbance of 6% at a wavelength of 460 nm. These transport and optical properties were comparable to those of TNO films fabricated by vacuum annealing. This demonstrates the potential of TNO as an electrode for GaN-based light-emitting diodes.

    元の言語English
    記事番号118003
    ジャーナルJapanese journal of applied physics
    51
    発行部数11
    DOI
    出版物ステータスPublished - 2012 11

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    フィンガープリント Fabrication of nb-doped tio2 transparent conducting films by postdeposition annealing under nitrogen atmosphere' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用