Fabrication of MgAl2O4 tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe4N ferromagnetic electrode

Masakiyo Tsunoda, Ryoichi Chiba, Kazuki Kabara

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Spinel MgAl2O4 thin films were deposited on MgO single-crystal substrates and epitaxial Fe (or Fe4N) thin films by RF-sputtering from a ceramic target. Epitaxial relationship was confirmed by X-ray diffraction analysis between the crystalline spinel MgAl2O4 films and the respective substrate and underlayers, while no diffraction peak was observed from the films deposited on amorphous substrates. Spin-valve type magnetic tunnel junctions (MTJs) with a stacking structure of Fe [Fe4N]/MgAl2O4/CoFeB/Ru/Fe/MnIr exhibited normal [inverse] tunnel magnetoresistance (TMR) effect, reflecting the sign of spin polarization of Fe [Fe4N]. The maximum magnitude of the TMR ratio obtained for the Fe-based and Fe4N-based MTJs was 67% and 18%, respectively. The resistance area product values of the MTJs were significantly larger than the reported values for the MTJs with a post-oxidized spinel MgAl2O4 barrier.

本文言語English
論文番号17D703
ジャーナルJournal of Applied Physics
117
17
DOI
出版ステータスPublished - 2015 5 7

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Fabrication of MgAl<sub>2</sub>O<sub>4</sub> tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe<sub>4</sub>N ferromagnetic electrode」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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