Fabrication of magnetic tunnel junctions with a synthetic ferrimagnetic free layer for magnetic field sensor applications

Kousuke Fujiwara, Mikihiko Oogane, Futoyoshi Kou, Daisuke Watanabe, Hiroshi Naganuma, Yasuo Ando

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Magnetic tunnel junctions (MTJs) with a CoFeB/Ru/Ni80Fe20 synthetic ferrimagnetic free layer and an MgO barrier layer were fabricated. The effect of the shape and thickness of the free layer on the magnetic field sensor characteristics was systematically investigated. We achieved a high sensitivity of 4.8%/Oe in the MTJ with a 70-nm-thick Ni80Fe20 layer and an aspect ratio of 1.0. Here, sensitivity is defined as TMR/(2Hk), where TMR is tunnel magnetoresistance ratio in the MTJ and Hk is a magnetic anisotropy field of the free layer. Furthermore, we successfully increased the detection field range up to 230 Oe while keeping high sensitivity and linearity.

本文言語English
論文番号013001
ジャーナルJapanese journal of applied physics
50
1
DOI
出版ステータスPublished - 2011 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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