Fabrication of magnetic tunnel junction with FePt nanodots for magnetic nanodot memory

Cheng Kuan Yin, Mariappan Murugesan, Ji Chel Bea, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

FePt nanodots dispersed in SiO2 insulating film with high-density (1.2 × 1013/cm2) was formed by self-assembled nanodot deposition (SAND) method. After annealing at 600°C for 1 h, the XRD and SQUID result indicate that, L10 face-centered-tetragonal (fct) FePt magnetic nanodots was formed with high coercivity of 1.15T. Furthermore, a magnetic tunnel junction with FePt magnetic nanodots was successfully fabricated and the magnetic tunnel junction formed on the thermally oxidized silicon substrate to fabricated magnetic metal-oxide-semiconductor (MOS) capacitor. The fundamental characteristics of MND memory were confirmed using magnetic MOS capacitor.

本文言語English
ホスト出版物のタイトルSemiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology
ページ418-422
ページ数5
出版ステータスPublished - 2006 12月 1
イベント6th International Conference on Semiconductor Technology, ISTC2007 - Shanghai, China
継続期間: 2007 3月 182007 3月 20

出版物シリーズ

名前Semiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology

Other

Other6th International Conference on Semiconductor Technology, ISTC2007
国/地域China
CityShanghai
Period07/3/1807/3/20

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「Fabrication of magnetic tunnel junction with FePt nanodots for magnetic nanodot memory」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル