Fabrication of lateral lattice-polarity-inverted GaN heterostructure

Ryuji Katayama, Yoshihiro Kuge, Takashi Kondo, Kentaro Onabe

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0 0 0 1) using a radio-frequency plasma enhanced molecular beam epitaxy is demonstrated. Its microscopic properties, which are closely related to the local polarity distribution, such as surface potentials, piezoelectric polarizations and residual carrier concentrations were investigated by Kelvin force microscopy and micro-Raman scattering. The successful inversion from Ga-polarity to N-polarity of GaN in a specific domain and its higher crystal perfection had been confirmed clearly by these microscopic analyses. The results were also fairly consistent with that of KOH etching experiments, which suggest the applicability of these processes to the fabrication of photonic nanostructures composed of nitride semiconductors.

本文言語English
ページ(範囲)447-451
ページ数5
ジャーナルJournal of Crystal Growth
301-302
SPEC. ISS.
DOI
出版ステータスPublished - 2007 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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