Nb-doped anatase Ti O2 [Ti0.94 Nb0.06 O2 (TNO)] films with high electrical conductivity and transparency were fabricated on nonalkali glass using pulsed laser deposition and subsequent annealing in a H2 atmosphere. The amorphous films as deposited on unheated substrates were found to crystallize, forming polycrystalline films at around 350 °C. The films annealed at 500 °C showed resistivity down to 4.6× 10-4 cm at room temperature and optical transmittance of 60%-80% in the visible region, which are comparable to those of epitaxial films. These results indicate that TNO films have the potential to be practical transparent conducting oxides that could replace indium tin oxide.
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