Fabrication of high aspect aluminum doped zinc oxide nanomechanical structures by deep RIE and ALD

研究成果: Conference contribution

抄録

This work reports the patterning of high aspect aluminum doped zinc oxide (AZO) for nanowall hollows and capacitive resonators by deep reactive ion etching (deep RIE) and atomic layer deposition (ALD). Nanowall hollows with 50 nm in thickness and 15 μm in height as well as smooth surfaces have been achieved and the aspect ratio of their height-to-width is as high as 300. Suspended AZO capacitive resonators have been successfully fabricated. Its resonant frequency is observed at 10.4 kHz and the quality factor (Q) is approximately 500.

本文言語English
ホスト出版物のタイトル2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ652-655
ページ数4
ISBN(電子版)9781509050789
DOI
出版ステータスPublished - 2017 2 23
イベント30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
継続期間: 2017 1 222017 1 26

出版物シリーズ

名前Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN(印刷版)1084-6999

Other

Other30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
CountryUnited States
CityLas Vegas
Period17/1/2217/1/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

フィンガープリント 「Fabrication of high aspect aluminum doped zinc oxide nanomechanical structures by deep RIE and ALD」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル