Fabrication of four-terminal fin field-effect transistors with asymmetric gate-oxide thickness using an anisotropic oxidation process with a neutral beam

Akira Wada, Kazuhiko Endo, Meishoku Masahara, Chi Hsien Huang, Seiji Samukawa

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Four-terminal (4T) fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) having symmetric oxide thick (Tox) (Tox1 = Tox2 = 2.5 nm) and asymmetric (Tox1 = 2:5 nm, Tox2 = 4 nm) oxide thick (Tox) gates that can flexibly control threshold voltage (Vth) have been fabricated using a simple gate oxidation process of neutral-beam oxidation (NBO). Flexible V th controllability was found in symmetric Tox 4TFinFETs. Effective Vth controllability while keeping a low subthreshold slope was achieved with asymmetric Tox 4T-FinFETs due to a slightly thicker Vth control gate oxide.

本文言語English
論文番号096502
ジャーナルApplied Physics Express
3
9
DOI
出版ステータスPublished - 2010 9月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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