Fabrication of deep silicon microstructures by the combination of anodization and p++ etch stop

Takeo Ohno, Shuji Tanaka, Masayoshi Esashi

研究成果: Article査読

3 被引用数 (Scopus)

抄録

In order to fabricate deep silicon (Si) microstructures with possibly vertical sidewalls by wet etching, macroporous Si was formed in a Si substrate by anodization using a hydrofluoric-acid (HF)-based solution with backside illumination. The shape of microstructures such as fixed-fixed beams and cantilevers were defined by boron (B) diffusion, and the B-diffused microstructures were left by a p++ etch stop after etching the macroporous Si in tetramethyl ammonium hydroxide. The B-diffused microstructures were fabricated, but the sidewalls were not as vertical as expected, but were inclined at 40°-60° to the substrate surface, due to undercutting during anodization. The reason for the undercutting is discussed.

本文言語English
ページ(範囲)493-497
ページ数5
ジャーナルIEEJ Transactions on Electrical and Electronic Engineering
5
4
DOI
出版ステータスPublished - 2010 7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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