In order to fabricate deep silicon (Si) microstructures with possibly vertical sidewalls by wet etching, macroporous Si was formed in a Si substrate by anodization using a hydrofluoric-acid (HF)-based solution with backside illumination. The shape of microstructures such as fixed-fixed beams and cantilevers were defined by boron (B) diffusion, and the B-diffused microstructures were left by a p++ etch stop after etching the macroporous Si in tetramethyl ammonium hydroxide. The B-diffused microstructures were fabricated, but the sidewalls were not as vertical as expected, but were inclined at 40°-60° to the substrate surface, due to undercutting during anodization. The reason for the undercutting is discussed.
|ジャーナル||IEEJ Transactions on Electrical and Electronic Engineering|
|出版ステータス||Published - 2010 7|
ASJC Scopus subject areas
- Electrical and Electronic Engineering