Copper interconnects with self-formed thin TiSi x O y barrier layers were successfully fabricated by sequentially depositing Cu(7 at.%Ti) alloys and pure Cu films on SiO 2-based substrates with 0.1-μm-wide trenches, and embedding the samples using a high-pressure annealing technique at 550°C and 195 MPa. Microstructural analyses revealed that the self-formed Ti-rich layers with thicknesses of about 5 nm were uniformly formed on the trench bottom and sidewall. In addition, these layers were thermally stable against Cu diffusion into the SiO 2-based interlayers. The present study suggests that the Cu-Ti alloy is one of the best candidates among possible interconnect and/or seed layer materials.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry