Fabrication of Cu(Ti) alloy interconnects with self-formation of thin barrier metal layers using a high-pressure annealing process

Susumu Tsukimoto, T. Onishi, K. Ito, M. Konno, T. Yaguchi, T. Kamino, M. Murakami

    研究成果: Article査読

    12 被引用数 (Scopus)

    抄録

    Copper interconnects with self-formed thin TiSi x O y barrier layers were successfully fabricated by sequentially depositing Cu(7 at.%Ti) alloys and pure Cu films on SiO 2-based substrates with 0.1-μm-wide trenches, and embedding the samples using a high-pressure annealing technique at 550°C and 195 MPa. Microstructural analyses revealed that the self-formed Ti-rich layers with thicknesses of about 5 nm were uniformly formed on the trench bottom and sidewall. In addition, these layers were thermally stable against Cu diffusion into the SiO 2-based interlayers. The present study suggests that the Cu-Ti alloy is one of the best candidates among possible interconnect and/or seed layer materials.

    本文言語English
    ページ(範囲)1658-1661
    ページ数4
    ジャーナルJournal of Electronic Materials
    36
    12
    DOI
    出版ステータスPublished - 2007 12 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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