抄録
A new technique to fabricate a periodically domain-inverted structure in LiNbO3 is reported. This structure, fabricated by Ti indiffusion on a LiNbO3 substrate, is transferred in a LiNbO3 thin film grown by liquid phase epitaxy. As the growth temperature decreases below 690°C, the cross section of the inverted domain changes from a reversed trapezoidal to a rectangular shape.
本文言語 | English |
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ページ(範囲) | 2154-2155 |
ページ数 | 2 |
ジャーナル | Applied Physics Letters |
巻 | 65 |
号 | 17 |
DOI | |
出版ステータス | Published - 1994 12月 1 |
ASJC Scopus subject areas
- 物理学および天文学(その他)