Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties

Y. Hirayama, S. Tarucha, Y. Suzuki, H. Okamoto

研究成果: Article査読

88 被引用数 (Scopus)

抄録

A quantum-well wire was fabricated with use of local intermixing of a GaAs-AlxGa1-xAs single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.

本文言語English
ページ(範囲)2774-2777
ページ数4
ジャーナルPhysical Review B
37
5
DOI
出版ステータスPublished - 1988 1 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics

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