Fabrication of β-AgGaO2 thin films by radio frequency magnetron sputtering

Issei Suzuki, Hiraku Nagatani, Yuta Arima, Masao Kita, Takahisa Omata

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Thin films of β-AgGaO2, were fabricated on (0001)-Al 2O3 substrates by radio frequency magnetron sputtering. β-AgGaO2 is a ternary oxide semiconductor possessing a wurtzite-derived β-NaFaO2-type structure. The effects of changing experimental parameters including sputtering atmosphere, pressure and substrate temperature were investigated. The effects of the sputtering conditions on the composition, phase, morphology and optical transmission of the films were determined. A highly crystalline β-AgGaO2 film was obtained by deposition at 200 °C under a 15% O2 atmosphere at a pressure of 0.5 Pa. This film was (001)-oriented, similar to wurtzite-type phases. The energy band gap of β-AgGaO2 was determined to be 2.2 eV from its photocurrent spectrum.

本文言語English
ページ(範囲)112-115
ページ数4
ジャーナルThin Solid Films
559
DOI
出版ステータスPublished - 2014 5 30
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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