Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs

Neeti Keswani, Yoshikata Nakajima, Neha Chauhan, Sakthi Kumar, H. Ohno, Pintu Das

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this work, we report the fabrication and transport properties of sub-micron Hall devices to be used for nanomagnetic studies. Hall bars were fabricated using electron-beam lithography followed by wet etching of GaAs/AlGaAs heterostructures containing two-dimensional electron gas (2-DEG). Metallization using multiple metallic layers were used to achieve ohmic contacts with the 2-DEG which is about 240 nm below the surface. Detailed characterization of the metallic layers using X-ray Photoelectron Spectroscopy (XPS) demonstrate the role of alloy formation and diffusion to form ohmic contacts with the 2-DEG. Electronic transport measurements show the metallic character of the 2-DEG. Hall effect and magnetoresistance were measured to estimate the carrier mobility of 4.2×104 cm2/V-s at 5 K in dark.

本文言語English
ホスト出版物のタイトル2nd International Conference on Condensed Matter and Applied Physics, ICC 2017
編集者Manoj Singh Shekhawat, Sudhir Bhardwaj, Bhuvneshwer Suthar
出版社American Institute of Physics Inc.
ISBN(電子版)9780735416482
DOI
出版ステータスPublished - 2018 5 8
イベント2nd International Conference on Condensed Matter and Applied Physics, ICC 2017 - Bikaner, India
継続期間: 2017 11 242017 11 25

出版物シリーズ

名前AIP Conference Proceedings
1953
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other2nd International Conference on Condensed Matter and Applied Physics, ICC 2017
国/地域India
CityBikaner
Period17/11/2417/11/25

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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