Fabrication and characterization of novel semiconductor nanomechanical structures

Engineering

• Gallium Arsenide 100%
• Fabrication 50%
• Nanoscale 50%
• Applications 50%
• Good Agreement 25%
• Self-Organization 25%
• Resonance Frequency 25%
• Elastic Constant 25%
• Contact Mode 25%
• Thickness 25%
• Surfaces 25%
• High Speed 25%

Physics

• Nanoscale 50%
• Fabrication 50%
• Utilization 50%
• Elasticity 25%
• Semiconductor 25%
• Single Crystals 25%
• Atomic Force Microscopy 25%
• Modulation 25%
• Self Organization 25%
• Imaging Techniques 25%
• Force Constant 25%
• Growth 25%
• Width 25%
• High Speed 25%

Material Science

• Mechanical Structure 50%
• Elastic Constant 25%
• Semiconductor Material 25%
• Single Crystal 25%
• Characterization 25%
• Surface 25%
• Devices 25%