Fabrication and characterization of novel semiconductor nanomechanical structures

Hiroshi Yamaguchi, Yoshiro Hirayama

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

As an application of the "bottom-up" self-organization growth technique to the fabrication of nanoscale mechanical structures, we selectively etched a GaAs sacrificial layer under InAs wires preferentially grown on bunched steps on misoriented GaAs(110) surfaces, which led to the successful formation of single crystal InAs nanoscale cantilevers. The lengths, widths, and thicknesses of the nanolevers are typically 50-300, 20-100 and 10-20 nm, respectively. The force constant, as measured by the force-modulation imaging technique using contact-mode atomic force microscopy, ranges from 0.5 to 10 N/m, showing good agreement with that estimated from the elastic constant of InAs. The resonance frequency is expected to reach 500 MHz for the smallest one, which promises possible application to high-speed nanomechanical devices.

本文言語English
ページ(範囲)1171-1176
ページ数6
ジャーナルSurface Science
532-535
DOI
出版ステータスPublished - 2003 6月 10
外部発表はい
イベントProceedings of the 7th International Conference on Nanometer - Malmo, Sweden
継続期間: 2002 8月 292002 8月 31

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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