Epitaxial films of Mn doped SnO2 were fabricated with pulsed laser deposition method. Thin films with (1 0 1) and (1 0 0) orientations were grown on r-(1 1̄02) and c-(0 0 0 1) sapphire substrates, respectively. Mn ions are soluble into SnO2 films up to 30 mol%. Transmission spectra show d-d transition absorption in mid-gap region due to presence of the Mn ion. Additional doping of Sb induces an n-type conduction with a carrier concentration as high as 6.9 × 1019 cm-3 at 300 K. The resistivity rapidly increases with decreasing the temperature below 50 K, where considerable increase of the resistivity is observed in a magnetic field below 20 K.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 2001 5月 1|
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