Fabrication and characterization of a Schottky barrier diode-type ultraviolet sensor using a ZnO single crystal

Haruyuki Endo, Mayo Sugibuchi, Kohsuke Takahashi, Shunsuke Goto, Tatsuo Hasegawa, Eriko Ohshima, Kazuyuki Meguro, Hane Kazuhiro, Yasube Kashiwaba

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In this paper, a visible light blind ultraviolet sensor of a Schottky barrier photodiode using a ZnO single crystal is described. The sensor consists of a semitransparent Pt film for the Schottky electrode and Al thin film for the ohmic electrode on an n-type ZnO single crystal substrate grown by the hydrothermal method. The responsivity was 0.12 A/W at the wavelength of 365 nm and the photoresponse time was 12 μs.

本文言語English
ページ(範囲)131-135+4
ジャーナルIEEJ Transactions on Sensors and Micromachines
127
3
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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