Extremely high electron mobility in a phonon-glass semimetal

S. Ishiwata, Y. Shiomi, J. S. Lee, M. S. Bahramy, T. Suzuki, M. Uchida, R. Arita, Y. Taguchi, Y. Tokura

研究成果: Article

108 引用 (Scopus)


The electron mobility is one of the key parameters that characterize the charge-carrier transport properties of materials, as exemplified by the quantum Hall effect as well as high-efficiency thermoelectric and solar energy conversions. For thermoelectric applications, introduction of chemical disorder is an important strategy for reducing the phonon-mediated thermal conduction, but is usually accompanied by mobility degradation. Here, we show a multilayered semimetal β-CuAgSe overcoming such a trade-off between disorder and mobility. The polycrystalline ingot shows a giant positive magnetoresistance and Shubnikov de Haas oscillations, indicative of a high-mobility small electron pocket derived from the Ag s-electron band. Ni doping, which introduces chemical and lattice disorder, further enhances the electron mobility up to 90,000 cm2V-1s-1 at 10 K, leading not only to a larger magnetoresistance but also a better thermoelectric figure of merit. This Ag-based layered semimetal with a glassy lattice is a new type of promising thermoelectric material suitable for chemical engineering.

ジャーナルNature Materials
出版物ステータスPublished - 2013 6

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Ishiwata, S., Shiomi, Y., Lee, J. S., Bahramy, M. S., Suzuki, T., Uchida, M., Arita, R., Taguchi, Y., & Tokura, Y. (2013). Extremely high electron mobility in a phonon-glass semimetal. Nature Materials, 12(6), 512-517. https://doi.org/10.1038/nmat3621