TY - JOUR
T1 - Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation
AU - Yamasaki, J.
AU - Ohno, Y.
AU - Takeda, S.
AU - Kimura, Y.
N1 - Funding Information:
ACKNOWLEDGEMENT This work was partly supported by the grant-in-aid 10205006 for scientific research (A) from the Ministry of Education, Science, Sports and Culture, Japan.
PY - 2003/1/11
Y1 - 2003/1/11
N2 - We have observed the formation of extended defects in silicon at low temperatures (below 25 K) by means of in-situ high-resolution transmission electron microscopy (HRTEM). The defects are distorted spheres, occasionally truncated by facets, less than 5nm in diameter. These defects are stable up to 773 K, and they gradually shrink during annealing in the temperature range from 773 to 973 K. From the analysis of HRTEM images of the defects, we have suggested that the defects are voids formed via athermal migration of vacancies under electron irradiation.
AB - We have observed the formation of extended defects in silicon at low temperatures (below 25 K) by means of in-situ high-resolution transmission electron microscopy (HRTEM). The defects are distorted spheres, occasionally truncated by facets, less than 5nm in diameter. These defects are stable up to 773 K, and they gradually shrink during annealing in the temperature range from 773 to 973 K. From the analysis of HRTEM images of the defects, we have suggested that the defects are voids formed via athermal migration of vacancies under electron irradiation.
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U2 - 10.1080/0141861021000026765
DO - 10.1080/0141861021000026765
M3 - Article
AN - SCOPUS:0242271353
SN - 1478-6435
VL - 83
SP - 151
EP - 163
JO - Philosophical Magazine
JF - Philosophical Magazine
IS - 2
ER -