Improvements in data retention characteristics of a FETMOS cell which has a self-aligned double poly-Si stacked structure are discussed. The improvement results from the use of a uniform write and erase technology. Experiments show that gradual detrapping of electrons from the gate oxide to the substrate effectively suppresses data loss of the erased cell which stores positive charges in the floating gate. It is shown that a uniform write and uniform erase technology using Fowler-Nordheim tunneling current guarantees a wide cell threshold voltage window even after 106 write and erase cycles. This technology realizes a highly reliable EEPROM with extended data retention characteristics.
|ジャーナル||Annual Proceedings - Reliability Physics (Symposium)|
|出版ステータス||Published - 1990|
|イベント||Twenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA|
継続期間: 1990 3 27 → 1990 3 29
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality