Experimental study of variability in polycrystalline and crystalline silicon channel FinFET CMOS inverters

Y. X. Liu, Y. Hori, M. Ohno, T. Matsukawa, Kazuhiko Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, M. Masahara

研究成果: Conference contribution

抄録

Polycrystalline-silicon (poly-Si) and crystalline-silicon (crystal-Si) channel FinFET CMOS inverters were successfully fabricated and the variations of threshold voltage (Vt) for their individual n- and p-channel transistors and the logic gate Vt (VThc) for the inverters were systematically investigated. It was found that poly-Si n- and p-channel devices show about 3 and 5 times larger σVt values, respectively and about 2 times larger σVThc as compared to those in crystal-Si channel ones. The calculated σVTHC values by using the error propagation low are good agreement with experimental results.

本文言語English
ホスト出版物のタイトル2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973750
DOI
出版ステータスPublished - 2015 6 3
外部発表はい
イベント2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan, Province of China
継続期間: 2015 4 272015 4 29

出版物シリーズ

名前International Symposium on VLSI Technology, Systems, and Applications, Proceedings
2015-June
ISSN(印刷版)1930-8868

Other

Other2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
国/地域Taiwan, Province of China
CityHsinchu
Period15/4/2715/4/29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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