It is well known that 3D channel devices, such as double-gate (DG) and tri-gate (TG) FinFETs, provide excellent short-channel effect (SCE) immunity. Thus, the scaled 3D channel FinFET flash memories with oxide-nitride-oxide (ONO) charge trapping layers have actively been developed [1-3]. Very recently, we have also developed floating-gate (FG) type SOI-FinFET flash memories [4-7]. In this paper, we report the experimental results of the FG type SOI-FinFET flash memories including gate structure dependent of Vt variability and SCE immunity. We also report the FinFET flash memories with split-gate and with an improved inter-poly dielectric (IPD) layer.