Experimental simulation of the effect of transmuted helium on the mechanical properties of silicon carbide

L. L. Snead, R. Scholz, A. Hasegawa, A. Frias Rebelo

研究成果: Article査読

26 被引用数 (Scopus)

抄録

Experimental results simulating the effects of transmuted helium on the mechanical properties of SiC are presented. High-purity, stoichiometric chemically vapor-deposited SiC bend bars were cyclotron implanted using 37.7 MeV α particles at 590 °C. A uniform implantation to 100 and 1000 appm was carried out, with a maximum implantation depth of ≃0.46 mm. Samples were then neutron irradiated to a dose of ≃8 dpa at 800 °C, thereby simulating atomic displacements at dose rates and temperatures similar to those of a fusion blanket, while in the presence of high helium levels of (≃125 appm He/dpa). Results on as-implanted SiC yield statistically significant changes in bend strength, indent fracture toughness and density. It is clear that these changes are in part due to the ≃0.1 dpa dose coincident with the helium implantation. Following neutron irradiation a larger change in properties occurs, though the difference between the helium pre-injected SiC, and the irradiated control samples was not statistically significant.

本文言語English
ページ(範囲)1141-1145
ページ数5
ジャーナルJournal of Nuclear Materials
307-311
2 SUPPL.
DOI
出版ステータスPublished - 2002 12

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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