Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs

Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Yasukazu Seki

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

The electrical characteristics of 2.5 kV-100 A μ-stack IGBTs having Punch-Through (PT) and Non-Punch-Through (NPT) types of device structures have been experimentally investigated. By optimizing the p+ collector layer of the NPT type IGBT, the trade-off relationship between the saturation voltage and the turn-off energy can be obtained to fit on the curve of the PT type IGBT. The Reverse Biased Safe-Operating-Areas (RBSOAs) of the PT type and NPT type IGBTs fabricated are also very wide having a large turn-off capability of 800 A at the DC bath voltage of 1250 V.

本文言語English
ホスト出版物のタイトルIEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)
ページ70-74
ページ数5
出版ステータスPublished - 1995
外部発表はい
イベントProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs - Yokohama, Jpn
継続期間: 1995 5 231995 5 25

出版物シリーズ

名前IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Other

OtherProceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs
CityYokohama, Jpn
Period95/5/2395/5/25

ASJC Scopus subject areas

  • 電子工学および電気工学

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