Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)2/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy

Mutsumi Sugiyama; Hisayuki Nakanishi; Shigefusa F. Chichibu

doi:10.1143/jjap.40.l428

Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)₂/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy

Mutsumi Sugiyama, Hisayuki Nakanishi, Shigefusa F. Chichibu

研究成果: Article › 査読

23 被引用数 (Scopus)

抄録

Ultraviolet photoemission spectroscopy measurement was carried out for c(001) plane Cu(Al,Ga)(S,Se)₂ chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, ΔE_v, at the heterointerfaces. The values of ΔE_v were estimated to be about 1.2 eV for CuAlS₂/GaAs, 1.0 eV for CuAlSe₂/GaAs, 1.1 eV for CuGaS₂/GaAs and 0.3 eV for CuGaSe₂/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se)₂ system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.

本文言語	English
ページ（範囲）	L428-L430
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	40
号	5 A
DOI	https://doi.org/10.1143/jjap.40.l428
出版ステータス	Published - 2001 5 1
外部発表	はい

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

文献へのアクセス

10.1143/jjap.40.l428

フィンガープリント「Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)<sub>2</sub>/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

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title = "Experimental determination of valence band discontinuities at Cu(Al,Ga)(S,Se)2/GaAs(001) heterointerfaces using ultraviolet photoemission spectroscopy",

abstract = "Ultraviolet photoemission spectroscopy measurement was carried out for c(001) plane Cu(Al,Ga)(S,Se)2 chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, ΔEv, at the heterointerfaces. The values of ΔEv were estimated to be about 1.2 eV for CuAlS2/GaAs, 1.0 eV for CuAlSe2/GaAs, 1.1 eV for CuGaS2/GaAs and 0.3 eV for CuGaSe2/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se)2 system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.",

keywords = "Band discontinuity, Chalcopyrite, Cu(Al,Ga)(S,Se), Heterointerface, UPS",

author = "Mutsumi Sugiyama and Hisayuki Nakanishi and Chichibu, {Shigefusa F.}",

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AU - Chichibu, Shigefusa F.

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N2 - Ultraviolet photoemission spectroscopy measurement was carried out for c(001) plane Cu(Al,Ga)(S,Se)2 chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, ΔEv, at the heterointerfaces. The values of ΔEv were estimated to be about 1.2 eV for CuAlS2/GaAs, 1.0 eV for CuAlSe2/GaAs, 1.1 eV for CuGaS2/GaAs and 0.3 eV for CuGaSe2/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se)2 system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.

AB - Ultraviolet photoemission spectroscopy measurement was carried out for c(001) plane Cu(Al,Ga)(S,Se)2 chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, ΔEv, at the heterointerfaces. The values of ΔEv were estimated to be about 1.2 eV for CuAlS2/GaAs, 1.0 eV for CuAlSe2/GaAs, 1.1 eV for CuGaS2/GaAs and 0.3 eV for CuGaSe2/GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se)2 system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.

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