Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

In this paper, we experimentally investigate the performance of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and the accumulation-mode (AM) FD-SOI MOSFETs. Firstly, we experimentally demonstrate that the drain current in AM multi-gate MOSFET is improved about 1.3 times compared with conventional inversion-mode (IM) MOSFETs with the same gate oxide. Secondly, we indicate that 1/f noise levels in AM MUGFETs are obviously suppressed compared with the conventional IM MUGFETs. The advantages resulted from the AM device structure for MUGFETs are demonstrated in this experiment.

本文言語English
ページ(範囲)1786-1788
ページ数3
ジャーナルMicroelectronic Engineering
86
7-9
DOI
出版ステータスPublished - 2009 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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