In this paper, we experimentally investigate the performance of multi-gate MOSFETs (MUGFETs) using the advanced radical gate oxide and the accumulation-mode (AM) FD-SOI MOSFETs. Firstly, we experimentally demonstrate that the drain current in AM multi-gate MOSFET is improved about 1.3 times compared with conventional inversion-mode (IM) MOSFETs with the same gate oxide. Secondly, we indicate that 1/f noise levels in AM MUGFETs are obviously suppressed compared with the conventional IM MUGFETs. The advantages resulted from the AM device structure for MUGFETs are demonstrated in this experiment.
ASJC Scopus subject areas