Excitonic Rabi oscillations in semiconductor quantum dot observed by photon echo spectroscopy

K. Asakura, Y. Mitsumori, H. Kosaka, K. Edamatsu, K. Akahane, N. Yamamoto, M. Sasaki, N. Ohtani

研究成果: Conference contribution

抄録

Optical properties in single-layer InGaAlAs/GaAlAs semiconductor quantum dots were studied by two-pulse photon echo technique. From the decay time, the optical coherence time of the excitons was estimated to be 2.5 ns, which is independent of the excitation intensity. We also observed the excitonic Rabi oscillations by measuring the photon echo intensity as a function of the excitation pulse area. The observed oscillatory structure is not expected from two-level systems.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
ページ529-530
ページ数2
DOI
出版ステータスPublished - 2011
イベント30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
継続期間: 2010 7 252010 7 30

出版物シリーズ

名前AIP Conference Proceedings
1399
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
国/地域Korea, Republic of
CitySeoul
Period10/7/2510/7/30

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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