We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at 4.2 K. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 2004 3 1|
|イベント||Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan|
継続期間: 2003 7 14 → 2003 7 18
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