Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure

K. Ono, K. Uchida, N. Miura, Y. Hirayama, K. Ohdaira, Y. Shiraki

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We observed a remarkable decrease of the integrated magneto-PL intensity with increasing magnetic field at 4.2 K. With increasing temperature or excitation laser power, however, the field-induced decrease of the integrated PL intensity became lesser amount. The experimental observation strongly suggests that electrons and holes are localized in minima of the fluctuating potential due to the interface roughness. We can infer that this is a general feature of the indirect excitons which comprise spatially separated electrons and holes.

本文言語English
ページ(範囲)698-702
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
21
2-4
DOI
出版ステータスPublished - 2004 3 1
外部発表はい
イベントProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
継続期間: 2003 7 142003 7 18

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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