Excitation photocapacitance study of ionized levels in n-type GaAs observed during photoquenching

Jun Ichi Nishizawa, Yutaka Oyama

研究成果: Article査読

抄録

The excitation photocapacitance method is applied under a constant capacitance condition to study Te-doped GaAs bulk crystals, prepared by annealing at 900°C for 67 h under extremely high arsenic vapor pressure (4817 Torr). Photocapacitance measurements after monochromatic light irradiation reveal two deep levels at 0.50 and 0.68 eV above the valence band only during photoquenching. By varying the primary excitation photon energy, the emission and the capture photon energies are strictly determined depending on the change of the charge states of the excess arsenic atom-related levels.

本文言語English
ページ(範囲)2892-2894
ページ数3
ジャーナルJournal of the Electrochemical Society
145
8
DOI
出版ステータスPublished - 1998 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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