Exchange coupling and GMR properties in ion beam sputtered hematite spin-valves

M. Sano, S. Araki, M. Ohta, K. Noguchi, H. Morita, M. Matsuzaki

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We have succeeded in fabricating of hematite (α-Fe2O3) antiferromagnetic (AF) thin films by the ion beam sputtering method, which give unidirectional anisotoropy to the adjacent ferromagnetic layer. Its exchange bias energy (Jex) is 0.03 erg/cm2, and blocking temperature (Tb) is 250°C. Spin-valve films with the hematite AF layer were also fabricated. They exhibit GMR property with unidirectional anisotoropy of the pinned layer. Spin- valve films of which magnetic layers consist of only NiFe exhibit relatively low MR ratio and poor thermal stability. However, the spin-valve using Co as the pinned layer and the free layer at the Cu interface exhibits MR ratio of more than 6 % and excellent thermal stability.

本文言語English
ページ(範囲)372-374
ページ数3
ジャーナルIEEE Transactions on Magnetics
34
2 PART 1
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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