TY - JOUR
T1 - Excavation rate of silicon surface nanoholes
AU - Ohno, Yutaka
AU - Takeda, Seiji
AU - Ichihashi, Toshinari
AU - Iijima, Sumio
N1 - Funding Information:
This work was partially supported by the Ministry of Education, Culture, Sports, Science, and Technology, Grant-in-Aid for Scientific Research (A) (2) No. 10305006, 2003–2006, and Grant-in-Aid for Young Scientist (A) (2) No. 15681006, 2003–2005.
PY - 2006
Y1 - 2006
N2 - Silicon surface nanoholes, that are small pits introduced spontaneously on electron exit surfaces of silicon foils under electron irradiation, are excavated at a constant rate with increasing electron dose. On the other hand, surface nanoholes on electron entrance surfaces become shallow under electron irradiation. The mechanism for the excavation and shallowing of surface nanoholes is discussed in terms of the movement of surface vacancies assisted by irradiating electrons.
AB - Silicon surface nanoholes, that are small pits introduced spontaneously on electron exit surfaces of silicon foils under electron irradiation, are excavated at a constant rate with increasing electron dose. On the other hand, surface nanoholes on electron entrance surfaces become shallow under electron irradiation. The mechanism for the excavation and shallowing of surface nanoholes is discussed in terms of the movement of surface vacancies assisted by irradiating electrons.
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U2 - 10.1063/1.2206693
DO - 10.1063/1.2206693
M3 - Article
AN - SCOPUS:33745711514
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
M1 - 126107
ER -