Excavation rate of silicon surface nanoholes

Yutaka Ohno, Seiji Takeda, Toshinari Ichihashi, Sumio Iijima

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Silicon surface nanoholes, that are small pits introduced spontaneously on electron exit surfaces of silicon foils under electron irradiation, are excavated at a constant rate with increasing electron dose. On the other hand, surface nanoholes on electron entrance surfaces become shallow under electron irradiation. The mechanism for the excavation and shallowing of surface nanoholes is discussed in terms of the movement of surface vacancies assisted by irradiating electrons.

本文言語English
論文番号126107
ジャーナルJournal of Applied Physics
99
12
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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