Evidence of layered transport of bulk carriers in Fe-doped Bi2Se3 topological insulators

Jun Ge, Taishi Chen, Ming Gao, Xuefeng Wang, Xingchen Pan, Meng Tang, Bo Zhao, Jun Du, Fengqi Song, Yongbing Xu, Rong Zhang

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We observe quantized Hall plateaus and Shubnikov de Haas oscillations in 10 at% Fe-doped Bi2Se3 flakes. All the features of the quantum transport coincide while normalizing the field-angle variable magnetoresistance to the perpendicular direction. The Hall step gives a specific contribution of ~1 e2/h per quintuple layer. This reveals a two-dimensional (2D) transport of the bulk electrons in the topological insulators. The crystal is demonstrated with an obvious ferromagnetism. Further evidences including a Berry phase of zero, a weak localization and a large effective mass rule out the contribution of the topological surface states (SS), suggesting that a great care should be taken to pindown the transport of the topological SS in topological insulators.

本文言語English
ページ(範囲)29-33
ページ数5
ジャーナルSolid State Communications
211
DOI
出版ステータスPublished - 2015 6 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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