Even-denominator fractional quantum Hall physics in ZnO

J. Falson, D. Maryenko, B. Friess, D. Zhang, Y. Kozuka, A. Tsukazaki, J. H. Smet, M. Kawasaki

研究成果: Article査読

89 被引用数 (Scopus)

抄録

The fractional quantum Hall (FQH) effect emerges in high-quality two-dimensional electron systems exposed to a magnetic field when the Landau-level filling factor, 1/2 e, takes on a rational value. Although the overwhelming majority of FQH states have odd-denominator fillings, the physical properties of the rare and fragile even-denominator states are most tantalizing in view of their potential relevance for topological quantum computation. For decades, GaAs has been the preferred host for studying these even-denominator states, where they occur at - 1/2 e = 5/2 and 7/2. Here we report an anomalous series of quantized even-denominator FQH states outside the realm of III-V semiconductors in the MgZnO/ZnO 2DES electron at - 1/2 e = 3/2 and 7/2, with precursor features at 9/2; all while the 5/2 state is absent. The effect in this material occurs concomitantly with tunability of the orbital character of electrons at the chemical potential, thereby realizing a new experimental means for investigating these exotic ground states.

本文言語English
ページ(範囲)347-351
ページ数5
ジャーナルNature Physics
11
4
DOI
出版ステータスPublished - 2015 4 8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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