Evaluations of crystal defects of 3C-SiC (111) film on Si(110) substrate

Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Detailed analysis on the planar defects in rotated 3C-SiC(111) films grown on Si(110) substrates have been conducted by using X-ray diffraction and cross-sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C-SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C-SiC film are discussed.

本文言語English
ページ(範囲)1125-1129
ページ数5
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
213
5
DOI
出版ステータスPublished - 2016 5 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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