Evaluations of crystal defects of 3C-SiC (111) film on Si(110) substrate

Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

研究成果: Article

3 引用 (Scopus)

抜粋

Detailed analysis on the planar defects in rotated 3C-SiC(111) films grown on Si(110) substrates have been conducted by using X-ray diffraction and cross-sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C-SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C-SiC film are discussed.

元の言語English
ページ(範囲)1125-1129
ページ数5
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
213
発行部数5
DOI
出版物ステータスPublished - 2016 5 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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