Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone; Alpana Nayak; Ryoji Kosugi; Yasunori Tanaka; Shinsuke Harada; Hajime Okumura; Yasuo Cho

doi:10.1063/1.4990865

Evaluation of silicon- and carbon-face SiO₂/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

Norimichi Chinone, Alpana Nayak, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

電気通信研究所・情報デバイス研究部門

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

A strong positive correlation was found between the trap density (D_it) at the SiO₂/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The D_it value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO₂/SiC interface quality. Using this measure, a quick evaluation of D_it using SNDM is possible.

本文言語	English
論文番号	061602
ジャーナル	Applied Physics Letters
巻	111
号	6
DOI	https://doi.org/10.1063/1.4990865
出版ステータス	Published - 2017 8 7

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.4990865

他のファイルとリンク

フィンガープリント「Evaluation of silicon- and carbon-face SiO<sub>2</sub>/SiC MOS interface quality based on scanning nonlinear dielectric microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{c36ce00f491847098f866000cae68089,

title = "Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy",

abstract = "A strong positive correlation was found between the trap density (Dit) at the SiO2/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The Dit value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO2/SiC interface quality. Using this measure, a quick evaluation of Dit using SNDM is possible.",

author = "Norimichi Chinone and Alpana Nayak and Ryoji Kosugi and Yasunori Tanaka and Shinsuke Harada and Hajime Okumura and Yasuo Cho",

year = "2017",

month = aug,

day = "7",

doi = "10.1063/1.4990865",

language = "English",

volume = "111",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy

AU - Chinone, Norimichi

AU - Nayak, Alpana

AU - Kosugi, Ryoji

AU - Tanaka, Yasunori

AU - Harada, Shinsuke

AU - Okumura, Hajime

AU - Cho, Yasuo

PY - 2017/8/7

Y1 - 2017/8/7

N2 - A strong positive correlation was found between the trap density (Dit) at the SiO2/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The Dit value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO2/SiC interface quality. Using this measure, a quick evaluation of Dit using SNDM is possible.

AB - A strong positive correlation was found between the trap density (Dit) at the SiO2/SiC interface and signal variation in a scanning nonlinear dielectric microscopy (SNDM) image. Si-face and C-face SiC wafers with a 45-nm-thick oxide layer were examined by the conventional high-low method and SNDM, which is a type of scanning probe microscopy. The Dit value measured by the high-low method and the standard deviation of normalized SNDM images exhibited a strong positive correlation, which means that the standard deviation of the normalized SNDM image can be used as a universal measure of the SiO2/SiC interface quality. Using this measure, a quick evaluation of Dit using SNDM is possible.

UR - http://www.scopus.com/inward/record.url?scp=85027247662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027247662&partnerID=8YFLogxK

U2 - 10.1063/1.4990865

DO - 10.1063/1.4990865

M3 - Article

AN - SCOPUS:85027247662

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 061602

ER -