Evaluation of Si 3 N 4 /Si interface by UV Raman spectroscopy

A. Ogura, T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, Takeo Hattori

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The stresses at Si 3 N 4 /Si (1 0 0), (1 1 1) and (1 1 0) interfaces were measured by UV Raman spectroscopy with a 364 nm excitation laser whose penetration depth into the Si substrate was estimated to be 5 nm. The Si 3 N 4 films were formed on Si (1 0 0), (1 1 1) and (1 1 0) using nitrogen-hydrogen (NH) radicals produced in microwave-excited high-density Xe/NH 3 mixture plasma. The localized stress detected from Raman peak shift was compressive at the (1 0 0) interface, and tensile at the (1 1 1) and (1 1 0) interfaces. The results showed that stress had strong correlation with the total density of subnitrides at the Si 3 N 4 /Si interface, and also with the full-width at half-maximum (FWHM) of Si the 2p 3/2 photoemission spectrum arising from the substrate. We believe that the localized stress affected subnitride formation because the amount of subnitride and the FWHM of Si 2p 3/2 decreased while the interface stress shifted in the tensile direction.

本文言語English
ページ(範囲)6229-6231
ページ数3
ジャーナルApplied Surface Science
254
19
DOI
出版ステータスPublished - 2008 7 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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